2SB1424 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v i c -3 a i cp *-5 a collector dissipation p c 0.5 w junction temperature t j 150 storage temperature t stg -55to+150 * single pulse pw=10ms. collector current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltae v cbo i c = -50a -20 v collector-emitter breakdown voltage v ceo i c = -1ma -20 v emitter-base breakdown voltage v ebo i e = -50a -6 v collector cutoff current ic bo v cb = -20v -0.1 a emitter cutoff current i ebo v eb =-5v -0.1 a dc current gain h fe v ce =-2v, i c = -0.1a 120 390 collector-emitter saturation voltage v ce(sat) i c /i b = -2a/ -0.1a -0.5 v output capacitance c ob v cb = -10v, i e =0a, f=1mhz 35 pf transition frequency f t v ce =-2v,i e =0.5a, f=100mhz 240 mhz h fe classification marking aeq aer rank q r hfe 120 270 180 390 features low v ce(sat) .v ce(sat) = -0.2v (typ.) (i c /i b = -2a / -0.1a) excellent dc current gain characteristics. pnp silicon transistor sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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